| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage device in which multi-level data can be written and read out. <P>SOLUTION: The device is provided with a data write-in means 22 provided with an electrolytic film 50, a memory cell 13 having first and second electrodes in which materials formed at its both planes are different, a first current source 20 supplying a first current to a memory 13, and a first counter 21 counting a supply time of the first current, and a data read-out means 26 provided with a second current source 23 supplying a second current being a reverse direction to the first current to the memory cell 13, a second counter 24 counting a supply time of the second current, and a potential sensor 25 detecting the potential of a bit line 11. The write-in of data is performed by controlling the supply time of the first current in accordance with write-in data, the read-out of data is performed by detecting the supply time of the second current until the potential of the bit line 11 becomes equal to prescribed potential. <P>COPYRIGHT: (C)2008,JPO&INPIT |
