Super junction LDMOS finFET devices

摘要

A fin-shaped field-effect transistor (finFET) device is provided. The finFET device includes a substrate material with a top surface and a bottom surface. The finFET device also includes a well region formed in the substrate material. The well region may include a first type of dopant. The finFET device also includes a fin structure disposed on the top surface of the substrate material. A portion of the fin structure may include the first type of dopant. The finFET device also includes an oxide material disposed on the top surface of the substrate material and adjacent to the portion of the fin structure. The finFET device also includes a first epitaxial material disposed over a portion of the fin structure. The first epitaxial material may include a second type of dopant.

主权项

1. A fin-based field effect transistor (finFET) device, comprising:
a substrate material having a top surface and a bottom surface; a first well region formed in the substrate material and comprising a first type of dopant; a first fin structure disposed on the top surface of the substrate material, wherein the first fin structure comprises a first portion and a second portion, the first portion comprising the first type of dopant; an oxide material disposed on the top surface of the substrate material and adjacent to the first portion of the first fin structure; at least one gate structure; and a first epitaxial material disposed over the second portion of the first fin structure, wherein the first epitaxial material comprises a second type of dopant, and wherein the first epitaxial material is adjacent to the at least one gate structure.