发明名称 Integrated capacitor
摘要 A method includes forming first, second, and third conductive leaf structures. The first conductive leaf structure includes a first conductive midrib and conductive veins. The second conductive leaf structure is electrically connected to the first conductive leaf structure, and includes a second conductive midrib, conductive veins extending toward the first conductive midrib, and conductive veins extending away from the first conductive midrib. The third conductive leaf structure includes a third conductive midrib between the first conductive midrib and the second conductive midrib, conductive veins extending toward the first conductive midrib, and conductive veins extending toward the second conductive midrib.
申请公布号 US9472612(B2) 申请公布日期 2016.10.18
申请号 US201615071014 申请日期 2016.03.15
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Kuo Chin-Wei;Luo Cheng-Wei;Yen Hsiao-Tsung;Huang Jun-Cheng;Jeng Min-Chie
分类号 H01L49/02 主分类号 H01L49/02
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A method comprising: forming a first electrode pattern in a first dielectric layer over a substrate, the first electrode pattern comprising a metal, the first electrode pattern comprising a first elongated member with a first side and a second side opposite the first side, the first electrode pattern further comprising first stubs extending from the first side of the first elongated member and second stubs extending from the second side of the first elongated member; and forming a second electrode pattern in the first dielectric layer, the second electrode pattern comprising a metal, the second electrode pattern comprising a second elongated member and a third elongated member, the second electrode pattern further comprising third stubs extending from the second elongated member and fourth stubs extending from the third elongated member, the first stubs being substantially interdigitated with the third stubs, the second stubs being substantially interdigitated with the fourth stubs.
地址 Hsin-Chu TW