Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes: a semiconductor substrate; a base above the semiconductor substrate; a first conductive plug in the base; a memory cell region in the base; and a logic circuit region connected to the memory cell region, the logic circuit including a first capacitor. The first capacitor includes: a first bottom electrode, a part of a lower surface of the first bottom electrode being in contact with the first conductive plug; a first insulating film on the first bottom electrode; and a first top electrode on the first insulating film. The first top electrode is spaced apart from the first conductive plug in planar view.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a base above the semiconductor substrate; a first conductive plug in the base; a memory cell region in the base; and a logic circuit region connected to the memory cell region, the logic circuit comprising a first capacitor, wherein the first capacitor comprises:
a first bottom electrode, a part of a lower surface of the first bottom electrode being in contact with the first conductive plug;a first insulating film on the first bottom electrode; anda first top electrode on the first insulating film, the first top electrode is spaced apart from the first conductive plug in planar view, the memory cell region comprises a second capacitor, the second capacitor comprises:
a second bottom electrode, a part of a lower surface of the second bottom electrode being in contact with a second conductive plug in the memory cell region of the base;a fourth insulating film on the second bottom electrode; anda second top electrode on the fourth insulating film, and the fourth insulating film is thinner than the first insulating film.