| 发明名称 | Ultrathin body (UTB) FinFET semiconductor structure | ||
| 摘要 | For fabrication of a semiconductor structure, there is set forth herein a method of fabricating a semiconductor structure, the method including forming a multilayer structure, the multilayer structure having a bulk substrate, a first layer defining an ultrathin body spaced apart from the bulk substrate, and a second layer above the first layer having material for defining a fin, and patterning the second layer to define a fin above the ultrathin body. | ||
| 申请公布号 | US9472574(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201514609115 | 申请日期 | 2015.01.29 |
| 申请人 | GLOBALFOUNDRIES Inc. | 发明人 | Zang Hui |
| 分类号 | H01L27/12;H01L29/66 | 主分类号 | H01L27/12 |
| 代理机构 | Heslin Rothenberg Farley and Mesiti PC | 代理人 | Heslin Rothenberg Farley and Mesiti PC ;Mesiti Nicholas |
| 主权项 | 1. A method of fabricating a semiconductor structure, the method comprising: forming a multilayer structure, the multilayer structure having a bulk substrate, a first layer defining an ultrathin body spaced apart from the bulk substrate, and a second layer above the first layer having material for defining a fin; and patterning the second layer to define a fin above the ultrathin body; and forming trenches at edges of the defined fin, and forming material in the trenches that defines pillars that support the fin. | ||
| 地址 | Grand Cayman KY | ||