| 发明名称 | Semiconductor device having three-dimensional structure and method of manufacturing the same | ||
| 摘要 | A semiconductor device includes a semiconductor pattern; conductive layers each including a first portion through which the semiconductor pattern passes and a second portion having a thickness greater than the first portion, wherein the first portion of each conductive layer includes a first barrier pattern surrounding the semiconductor pattern and a material pattern, which is formed in the first barrier pattern and has an etch selectivity with respect to the first barrier pattern, and the second portion of each conductive layer includes a conductive pattern; and contact plugs connected to the second portion of each of the conductive layers. | ||
| 申请公布号 | US9472567(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201414480207 | 申请日期 | 2014.09.08 |
| 申请人 | SK Hynix Inc. | 发明人 | Lee Ki Hong;Pyi Seung Ho;Bin Jin Ho |
| 分类号 | H01L29/792;H01L27/115 | 主分类号 | H01L29/792 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor pattern; conductive layers each including a first portion through which the semiconductor pattern passes and a second portion having a thickness greater than the first portion, wherein the first portion of each conductive layer includes a first barrier pattern surrounding the semiconductor pattern and a material pattern which is formed in the first barrier pattern, and has an etch selectivity with respect to the first barrier pattern, and the second portion of each conductive layer includes a conductive pattern; and contact plugs connected to the second portion of each of the conductive layers, wherein the material pattern includes non-conductive material. | ||
| 地址 | Gyeonggi-do KR | ||