发明名称 |
Strain tunable light emitting diodes with germanium P-I-N heterojunctions |
摘要 |
Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths. |
申请公布号 |
US9472535(B2) |
申请公布日期 |
2016.10.18 |
申请号 |
US201314074955 |
申请日期 |
2013.11.08 |
申请人 |
Wisconsin Alumni Research Foundation |
发明人 |
Lagally Max G.;Sänchez Pérez José Roberto |
分类号 |
H01L25/16;H01L31/028 |
主分类号 |
H01L25/16 |
代理机构 |
Bell & Manning, LLC |
代理人 |
Bell & Manning, LLC |
主权项 |
1. A vertical p-i-n diode comprising:
a mechanically stretchable substrate; a vertical p-i-n heterojunction structure affixed to the mechanically stretchable substrate, the p-i-n heterojunction structure comprising a layer of n-type doped Ge, a layer of p-type doped Ge, and a layer of intrinsic Ge disposed between the n-type doped and p-type doped layers of Ge, wherein the combined thickness of the layer of n-type doped Ge, the layer of intrinsic Ge, and the layer of p-type doped Ge is no greater than about 100 nm; a first electrically conductive contact in electrical communication with the layer of n-type doped Ge; a second electrically conductive contact in electrical communication with the layer of p-type doped Ge; and a stretching actuator configured to stretch the mechanically stretchable substrate and the affixed vertical p-i-n heterojunction structure to induce a biaxial tensile strain in the Ge. |
地址 |
Madison WI US |