发明名称 |
TITANIUM NITRIDE HARD MASK AND ETCH RESIDUE REMOVAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers.SOLUTION: The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016213461(A) |
申请公布日期 |
2016.12.15 |
申请号 |
JP20160092808 |
申请日期 |
2016.05.02 |
申请人 |
AIR PRODUCTS AND CHEMICALS INC |
发明人 |
LIU WEN DAR;LEE YI-CHIA;CASTEEL WILLIAM JACK JR;CHEN TIANNIU;RAJIB KRISHAN AGARWAL;MADHUKAR BHASKARA RAO |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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