| 摘要 |
PROBLEM TO BE SOLVED: To improve all three characteristics of a MOS, formed by forming a trench gate electrode on a SiC substrate, whose on-resistance is high, voltage-withstanding is low, and a saturation current is high.SOLUTION: A swollen part is formed near a bottom surface of a trench to fill an embedded insulator film. Stress is applied to a SiC crystal of a portion to be a channel to reduce on-resistance. A distance between neighboring swollen parts becomes short to make it possible to suppress a saturation current low. Owing to the presence of the embedded insulator film, electric field concentration generated in a drift area is relaxed to improve the voltage-withstanding.SELECTED DRAWING: Figure 1 |
