发明名称 PROCESSOR
摘要 PURPOSE: To provide a processor which performs heat treatment such as CVD, or etching with high in-surface uniformity to a semiconductor wafer, and can get high throughput with small installation area. CONSTITUTION: A single wafer processing chamber units 1, which can perform heat treatment or etching of one or two sheets, are arranged, capably of mounting and removal along the guide rail 21, on a plurality of stages of shelves 20 of a chamber unit storage 2, and also next to the chamber unit storage 2, load lock chambers 4 and 4 common to each processing chamber unit 1 are provided. Each processing chamber unit 1 is equipped with a connection to airtightly connect, capably of mounting and removal, to the wafer carriage port on the side of the load lock chambers 4 and 5, and a connection to connect capably of mounting and removal to the gas pipe and power service line on the side of chamber unit storage.
申请公布号 JPH08321470(A) 申请公布日期 1996.12.03
申请号 JP19950152196 申请日期 1995.05.26
申请人 TOKYO ELECTRON LTD;TOKYO ELECTRON TOHOKU LTD 发明人 OKASE WATARU
分类号 H01L21/302;H01L21/02;H01L21/205;H01L21/3065;H01L21/31;H01L21/677;H01L21/68;(IPC1-7):H01L21/205;H01L21/306 主分类号 H01L21/302
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