METHOD FOR PROCESSING MULTILAYER FILM AND THIN FILM TRANSISTOR TYPE LIQUID CRYSTAL DISPLAY

摘要

PROBLEM TO BE SOLVED: To form a pattern of multilayer film structure comprising first and second films simultaneously with a pattern of single layer film structure by patterning the multilayer film through single time photolithographic process and single time etching process. SOLUTION: A multilayer film comprising a gate insulation layer 4 and a semiconductor film formed continuously by CVD is subjected to single time photolithography process and single time dry or wet etching process such that W2>=W1 is satisfied, where W1 is the width of pattern at the part of single layer structure only of the gate insulation layer 4 and W2 is the width of pattern at the part of multilayer structure of the gate insulation layer 4 and the semiconductor film. In this regard, etching conditions are controlled such that the overetching quantity becomes W1/2. When the processing method is applied to a substrate for forming the active element of liquid crystal display, the yield can be increased.