Method of improving beta ratio in SRAM and device manufactured thereby

摘要

A method of forming an SRAM transistor cell on a doped semiconductor substrate with a halo region in transistors thereof by the steps including well formation, field isolation formation, threshold voltage implant, gate oxidation; deposition of polysilicon and patterning thereof into gate electrode; post etching anneal; N type LDD photolithography and ion implanting NMOS transistor devices; ion implant halo regions in a transistor; P type LDD photolithography and ion implanting PMOS transistor devices; spacer formation; N+ source/drain photolithography and ion implanting; and P+ source/drain photolithography and ion implanting.