| 摘要 |
PURPOSE: A simulation method is to simulate an ion injection and a diffusion of indium impurities by using a conventional simulation unit while establishing various models and parameters regarding indium. CONSTITUTION: Indium ions are injected into a wafer, and a first ion injection depth is measured. Nine moments are drawn out from the measurement result by using a dual pearson ion injection model equation. A diffusion process is performed regarding the wafer, and a second ion injection depth is measured. An optimum value of the moment parameter regarding impurity diffusivity of indium is calculated by using the moment parameter and the measured data. A parameter regarding a pair reaction of the indium impurities, a diffusivity of an indium interstitial pair and a solid solubility are established. A segregation value and a transport value are optimized in an interface between the wafer and the oxidation layer. More than a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) device is selected to establish a process condition with a simulation input file, and a function of a gate length and a threshold voltage is calculated. The function of respective gate lengths and threshold voltages is calculated while varying the process condition in the input file. A relative absolute error of the calculated function value is to be checked to converge into a predetermined scope. When the error exceeds the predetermined scope, the pair reaction parameter is changed. A minimum parameter is selected if the error exceeds the scope again.
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