发明名称 |
Method of manufacturing an insulation film in a semiconductor device |
摘要 |
A method of manufacturing an insulating film in a semiconductor device is disclosed. The method comprises the steps of forming a SOD film on the entire structure to fill any distance between conductive layer patterns and after performing a curing process, forming a hard mask film on the SOD film, wherein the silicon oxide film is deposited by plasma deposition method using SiH4 and N2O as a reaction gas at a low-temperature and at a low-pressure and wherein in a stabilization step, the supply amount of SiH4 is greater than that of N2O and in a deposition step, the supply amount of N2O is greater than that of SiH4.
|
申请公布号 |
US2002000667(A1) |
申请公布日期 |
2002.01.03 |
申请号 |
US20010880348 |
申请日期 |
2001.06.13 |
申请人 |
AHN SANG TAE;SONG JUNG GYU |
发明人 |
AHN SANG TAE;SONG JUNG GYU |
分类号 |
H01L21/31;C23C16/40;C23C16/44;C23C16/455;H01L21/312;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|