Semiconductor memory device

摘要

A semiconductor memory device is provided to reduce current consumption during a refresh operation by decreasing the number of wordlines activated at the same time, including a block set having a plurality of cell array blocks which are divided into a plurality of regions which employ wordlines independently from each other, row driving means to alternatively select the wordlines arranged each in the regions, and column driving means to activate columns of the cell arrays involved in the wordlines selected by the row driving means.