| 摘要 |
The productivity of a photoelectric conversion device is increased by separately conducting a step of forming a microcrystalline semiconductor film and an amorphous semiconductor film without adding an impurity gas. In a process for producing a photoelectric conversion device comprising a substrate having thereon one or plural unit cells comprising a first electrode, a photoelectric conversion layer, and a second electrode laminated with each other, the photoelectric conversion device is produced by conducting a step of forming a first electrode, a step of forming a first microcrystalline semiconductor film without adding an n type or p type conductive type determining impurity element, a step of forming a substantially intrinsic amorphous semiconductor film, and a step of forming a second microcrystalline semiconductor film without adding an n type or p type conductive type determining impurity element, by a plasma CVD method, and after the step of for forming the second electrode, conducting a step of injecting a p type conductive type determining impurity element from the surface of the second electrode to the second microcrystalline semiconductor film, followed by heating.
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