THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME FOR PREVENTING LIGHT LEAKAGE DUE TO CONTACT HOLE

摘要

PURPOSE: A TFT(Thin Film Transistor) substrate and a method for fabricating the TFT substrate are provided to prevent light leakage due to a contact hole by forming the contact hole in a small size in an organic layer using a mask having a predetermined slit pattern. CONSTITUTION: A TFT substrate includes an insulating substrate(110), a gate line(121) formed on the insulating substrate, a gate insulating layer(140) formed on the gate line, and a semiconductor layer(151) formed on the gate insulating layer. The TFT substrate further includes a data line and a drain electrode(175) formed on the semiconductor layer, a passivation layer(180p) that is formed on the data line and the drain electrode and has the first contact hole(186) exposing a part of the drain electrode, an organic layer(180q) having the second contact hole(187), formed on the passivation layer, and a pixel electrode(190) formed on the organic layer and connected to the drain electrode through the first and second contact holes. The sidewall of the second contact hole is tilted at a predetermined angle against the insulating substrate. The diameter of the second contact hole is smaller than that of the first contact hole.