发明名称 MEMORY CELL AND SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent delay in output timing of reverse data. SOLUTION: Ferroelectric capacitors Q1<SB>nm</SB>, Q2<SB>nm</SB>are provided with NMOSs 7, 10, 11, 14 of which the upper electrodes can be connected with a plate line PL<SB>m</SB>and the lower electrodes can be connected with bit lines BL2<SB>m</SB>, BL4<SB>m</SB>, NMOSs 8, 9, 12, 13 of which the lower electrodes can be connected with the plate line PL<SB>m</SB>and the upper electrodes can be connected with bit lines BL1<SB>m</SB>, BL3<SB>m</SB>. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005050505(A) 申请公布日期 2005.02.24
申请号 JP20040207661 申请日期 2004.07.14
申请人 SEIKO EPSON CORP 发明人 WATANABE MASAYA
分类号 G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C11/22
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