发明名称 Method of depositing polythiophene semiconductor on a substrate
摘要 Provided is a method of depositing a polythiophene semiconductor on a substrate. First, the semiconductor is dissolved in a solvent comprising a halogen-containing aromatic compound. Then, the resulting solution is ink-jet printed onto the substrate. The method is useful in the production of microelectronic components such as thin film transistor devices.
申请公布号 US2006223219(A1) 申请公布日期 2006.10.05
申请号 US20060336778 申请日期 2006.01.23
申请人 SEIKO EPSON CORPORATION 发明人 NEWSOME CHRISTOPHER;LI SHUNPU;KUGLER THOMAS;RUSSELL DAVID
分类号 H01L51/40;H01G9/20;H01L21/20;H01L21/36;H01L51/00 主分类号 H01L51/40
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