发明名称 |
Method of depositing polythiophene semiconductor on a substrate |
摘要 |
Provided is a method of depositing a polythiophene semiconductor on a substrate. First, the semiconductor is dissolved in a solvent comprising a halogen-containing aromatic compound. Then, the resulting solution is ink-jet printed onto the substrate. The method is useful in the production of microelectronic components such as thin film transistor devices.
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申请公布号 |
US2006223219(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20060336778 |
申请日期 |
2006.01.23 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
NEWSOME CHRISTOPHER;LI SHUNPU;KUGLER THOMAS;RUSSELL DAVID |
分类号 |
H01L51/40;H01G9/20;H01L21/20;H01L21/36;H01L51/00 |
主分类号 |
H01L51/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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