| 摘要 |
The method of fabricating a semiconductor device includes subjecting a semiconductor substrate to trench etching by alternately repeating an etching step and a deposition step. The etching step creates a trench structure by dry-etching the exposed surface of the semiconductor substrate. An etching mask is formed on the surface of the semiconductor substrate so that the semiconductor substrate has the exposed portion. The deposition step deposits a protection film for suppressing etching of the trench side walls. The method of fabricating a semiconductor device also includes subjecting the semiconductor substrate that has just undergone the trench etching to a heat treatment at a predetermined temperature. The semiconductor substrate is heat-treated within a temperature range of 300 to 500° C. immediately following the trench etching, for example. Plasma ashing is then performed.
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