DESIGN DEVICE, METHOD, PROGRAM FOR PHOTOMASK, PHOTOMASK, AND MEMORY MEDIUM

摘要

PROBLEM TO BE SOLVED: To form a desired fine pattern with less dimensional variation.

SOLUTION: In a region where a semitransmissive region Tb, a transmissive region Ta, and a light-shielding portion S are successively disposed along a longitudinal direction of a L/S pattern from an end portion Ma of a memory cell region M positioned in the center of the entire region Z of the pattern, wherein a dimension in a width direction of the L/S pattern in the semitransmissive region Tb is set larger with the shorter the distance from the semitransmissive region Tb to the light-shielding portion S.

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