Nitride field effect transistor,申请号EP20020005656-传众专利搜索

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发明名称	Nitride field effect transistor
摘要
申请公布号	EP1246256(B1)	申请公布日期	2007.08.29
申请号	EP20020005656	申请日期	2002.03.12
申请人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD	发明人	INOUE, KAORU;IKEDA, YOSHITO;MASATO, HIROYUKI
分类号	H01L29/20;H01L21/205;H01L29/778;H01L21/338;H01L29/812	主分类号	H01L29/20
代理机构		代理人
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