| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic memory where information is stably and securely read and written while writing current is reduced, and also to provide an information reading/writing method of a magnetic storage element. <P>SOLUTION: The magnetic storage element 4 has a first magnetic layer 4A whose magnetization direction can be inverted, a second magnetic layer 4C whose magnetization direction is fixed, and a non-magnetic layer 4B sandwiched between the first magnetic layer 4A and the second magnetic layer 4C. Writing/reading current is supplied to a lamination direction of the element by reading/writing wiring 5. Bias wiring 18 which can apply a bias magnetic field to the first magnetic layer 4A at the time of reading is arranged near the magnetic storage element 4. <P>COPYRIGHT: (C)2008,JPO&INPIT |
