发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the generation of voids by moderating the charge speed difference of sealing resin, when a plurality of semiconductor devices are sealed in a lump by mold forming. SOLUTION: A semiconductor device 4 is mounted to a substrate frame 1 having a plurality of device formation regions 2. In the region except an element mounting region of the substrate frame 1, a protruded portion 7 to control the flow of the sealing resin is formed. The plurality of semiconductor devices 4 are sealed in a lump by charging the sealing resin in a mold block 8 in which the substrate frame 1 is arranged. Individualized pieces of the semiconductor device are manufactured by cutting the substrate frame 1 together with the sealing resin 6. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008311558(A) 申请公布日期 2008.12.25
申请号 JP20070159941 申请日期 2007.06.18
申请人 TOSHIBA CORP 发明人 FURUNO ATSUSHI
分类号 H01L21/56 主分类号 H01L21/56
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