| 摘要 |
PROBLEM TO BE SOLVED: To provide an electric characteristic evaluating method of a memory device in which measurement efficiency of hysteresis measurement can be improved and a polarization amount at a start point of the hysteresis measurement can be evaluated. SOLUTION: The electric characteristic evaluating method of memory device according to the present invention includes a polishing process of polishing the memory device until a barrier metal layer formed between an inter-layer insulating film and first and second wiring layers appears, a cutting process of cutting a connection portion of the barrier metal layer connecting a plug and an upper electrode to each other, and a voltage application process of applying a voltage to the second wiring layer connected to a lower electrode. COPYRIGHT: (C)2009,JPO&INPIT
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