| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can avoid plasma damage to a gate insulating film and stably operate even when microfabricated, to provide a test circuit, and to provide an evaluation method using the same. SOLUTION: The semiconductor device has an internal circuit 1 including a MOS transistor 4 having a first gate electrode, a first gate insulating film, and a source region and a drain region, a MOS transistor 3 for protection which is connected to the first gate electrode of the MOS transistor 4 and has a second gate electrode, a second gate insulating film, and a source region and a drain region and protects the internal circuit 1, a first metal film 2 connected to the first gate electrode of the MOS transistor 4 through the MOS transistor 3 for protection, and an electrode pad 5 for protection connected to the first gate electrode of the MOS transistor 3 for protection. The internal circuit 1 and first metal film 2 are connected through the MOS transistor 3 for protection. COPYRIGHT: (C)2009,JPO&INPIT
|
