Capacitor and method for manufacturing the same

摘要

The capacitor of the present invention comprises: an opening part formed in an interlayer insulating film on a semiconductor substrate; a lower electrode made of a polycrystalline silicon with an uneven surface part; a chemical oxide film formed on the uneven surface part of the lower electrode; an silicon oxynitride film which is obtained by modifying the chemical oxide film by nitriding processing; a capacitive insulating film made of a metal oxide film formed on the silicon oxynitride film; and an upper electrode formed on the capacitive insulating film.