发明名称 |
Inverted nonvolatile memory device, stack module, and method of fabricating the same |
摘要 |
Example embodiments provide a nonvolatile memory device that may be integrated through stacking, a stack module, and a method of fabricating the nonvolatile memory device. In the nonvolatile memory device according to example embodiments, at least one bottom gate electrode may be formed on a substrate. At least one charge storage layer may be formed on the at least one bottom gate electrode, and at least one semiconductor channel layer may be formed on the at least one charge storage layer.
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申请公布号 |
US2009057745(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20080073398 |
申请日期 |
2008.03.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YIN HUAXIANG;PARK YOUNG-SOO;KIM SUN-IL |
分类号 |
H01L29/788;H01L21/335;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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