PAGE RETIREMENT IN A NAND FLASH MEMORY SYSTEM

摘要

In a data storage system including a non-volatile random access memory (NVRAM) array, a page is a smallest granularity of the NVRAM array that can be accessed by read and write operations, and a memory block containing multiple pages is a smallest granularity of the NVRAM array that can be erased. Data are stored in the NVRAM array in page stripes distributed across multiple memory blocks. In response to detection of an error in a particular page of a particular block of the NVRAM array, only the particular page of the particular block is retired, such that at least two of the multiple memory blocks across which a particular one of the page stripes is distributed include differing numbers of active (non-retired) pages.

主权项

1. A method of page retirement in a data storage system including a non-volatile random access memory (NVRAM) array, the method comprising:
storing data in the NVRAM array in page stripes distributed across multiple memory blocks, wherein at least two of the multiple memory blocks across which one of the page stripes is distributed include differing numbers of active physical pages, wherein a physical page is a smallest granularity that can be accessed in the NVRAM array and a memory block containing multiple physical pages is a smallest granularity that can be erased in the NVRAM array; detecting an error in a particular physical page of a particular block of the NVRAM array; in response to detecting the error, retiring only the particular physical page of the particular block and recording retirement of the particular physical page in a page status data structure; thereafter, allocating a plurality of page stripes across a group of memory blocks including the particular block such that each of the plurality of page stripes is formed at a respective one of a plurality of different physical page indices, wherein the allocating includes skipping the particular page in the particular block when allocating a first page stripe at a first physical page index based on the page status data structure indicating the particular page as retired, and skipping another page in another block within the group of memory blocks when allocating a second page stripe at a second physical page index based on the page status data structure indicating said another page as retired; and thereafter, retiring a physical memory region in the NVRAM array containing the particular physical page and multiple other physical pages in response to retirement of a threshold number of physical pages within the physical memory region.