发明名称 Storage device and semiconductor apparatus
摘要 A storage device includes a storage element having first and second terminals that cause a first electrical characteristic change when an electric signal of a first threshold level or higher is applied and that cause a second electrical characteristic change, which is asymmetrical to the first electrical characteristic change, when an electric signal of a second threshold level or higher, the polarity of the electric signal of the second threshold level or higher being different from the polarity of the electric signal of the first threshold level or higher, is applied; and a unipolar transistor connected in series with the storage element. One of the first terminal and the second terminal of the storage element is electrically connected to the unipolar transistor. The unipolar transistor has a negative polarity or a positive polarity in accordance with the first terminal or the second terminal electrically connected to the unipolar transistor.
申请公布号 US7336520(B2) 申请公布日期 2008.02.26
申请号 US20060422483 申请日期 2006.06.06
申请人 SONY CORPORATION 发明人 HACHINO HIDENARI;OKAZAKI NOBUMICHI;ARATANI KATSUHISA
分类号 G11C11/00 主分类号 G11C11/00
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