发明名称 パワー半導体モジュール
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor module capable of inhibiting influences on a semiconductor chip which is caused by a linear expansion coefficient difference between solder and a post electrode even when the post electrode is covered by an electric joining material such as the solder.SOLUTION: A power semiconductor module includes: an insulation substrate 12 where a semiconductor chip 11 is mounted through a metal plate 16; a printed board 14 where an external connection terminal is disposed on one surface and a post electrode 18 connected with the semiconductor chip is provided on the other surface; and a resin sealing material 24 which encloses the insulation substrate 12 and the printed board 14 therein. The post electrode of the printed board is joined to the semiconductor chip by an electric joining material 19, and a stress relaxing region 26 is formed facing the one surface of the printed board 14.
申请公布号 JP5962365(B2) 申请公布日期 2016.08.03
申请号 JP20120202077 申请日期 2012.09.13
申请人 富士電機株式会社 发明人 齊藤 まい;堀 元人;池田 良成
分类号 H01L25/07;H01L23/29;H01L23/31;H01L25/18 主分类号 H01L25/07
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