NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF

摘要

A manufacturing method of a non-volatile memory is provided. A tunneling dielectric layer, a first conductive pattern, and isolation structures are formed on a substrate. Using a first photoresist layer as a mask, the first conductive pattern is partially removed to form a first opening exposing the substrate. An insulating layer is formed to fill the first opening and cover the first conductive pattern and the isolation structures. Using a second photoresist layer shielding a portion of the first conductive pattern as a mask, the insulating layer surrounding the first conductive pattern is removed to form a patterned insulating layer having a second opening exposing a portion of the first conductive pattern. An inter-gate dielectric layer and a second conductive pattern are formed on the first conductive pattern to fill the second opening, the first conductive pattern forms a floating gate, and the second conductive pattern forms a control gate.

主权项

1. A manufacturing method of a non-volatile memory, comprising:
providing a substrate, wherein a tunneling dielectric layer and a first conductive pattern are formed on the substrate in order, and a plurality of isolation structures are formed in the first conductive pattern, the tunneling dielectric layer, and the substrate; forming a first photoresist layer on the substrate, wherein the first photoresist layer exposes a portion of the first conductive pattern and a portion of the isolation structures; removing a portion of the first conductive pattern by using the first photoresist layer as a mask to form a first opening between the isolation structures and the first conductive pattern, wherein the first opening exposes the substrate; removing the first photoresist layer; forming an insulating layer on the substrate, wherein the insulating layer completely fills the first opening and covers the first conductive pattern and the isolation structures; forming a second photoresist layer on a portion of the insulating layer, wherein the second photoresist layer shields a portion of the first conductive pattern; by using the first photoresist layer as a mask, removing a portion of the insulating layer and a portion of the isolation structures located in a periphery of the first conductive pattern, wherein the insulating layer and the isolation structures remaining on the substrate form a patterned insulating layer, the patterned insulating layer has a second opening, and the second opening exposes a top portion and a sidewall of the first conductive pattern; removing the second photoresist layer; forming an inter-gate dielectric layer on the first conductive pattern, wherein the insulating layer remaining on the substrate is disposed between the inter-gate dielectric layer and the substrate; forming a second conductive pattern on the inter-gate dielectric layer, wherein the second conductive pattern completely fills the second opening and thus the insulating layer remaining on the substrate is disposed on a sidewall of the second conductive pattern, the second conductive pattern forms a control gate, the first conductive pattern forms a floating gate, and the control gate covers and surrounds the floating gate; and removing a portion of the insulating layer remaining on the substrate to form an insulator pattern at two sides of a bottom portion of the floating gate and under a portion of the control gate on two sides of the floating gate.