| 发明名称 |
METHODS FOR FORMING COBALT-COPPER SELECTIVE FILL FOR AN INTERCONNECT |
| 摘要 |
Methods for processing a substrate include: (a) depositing a cobalt layer to a first thickness within a first plurality of features and a second plurality of features formed in a substrate, wherein each of the first plurality of features and each of the second plurality of features comprises an opening, and wherein a width of the openings of the first plurality of features is less than a width of the openings of the second plurality of features; and (b) heating the substrate to a first temperature to fill the first plurality of features with cobalt material while simultaneously depositing a fill material on the substrate to fill the second plurality of features. |
| 申请公布号 |
US2016240432(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201615019587 |
申请日期 |
2016.02.09 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
TAO RONG;HA TAE HONG;TANG XIANMIN;LEE JOUNG JOO |
| 分类号 |
H01L21/768;H01L21/285 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of processing a substrate, comprising:
(a) depositing a cobalt layer to a first thickness within a first plurality of features and a second plurality of features formed in a substrate, wherein each of the first plurality of features and each of the second plurality of features comprises an opening, and wherein a width of the openings of the first plurality of features is less than a width of the openings of the second plurality of features; and (b) heating the substrate to a first temperature to fill the first plurality of features with cobalt material while simultaneously depositing a fill material on the substrate to fill the second plurality of features. |
| 地址 |
Santa Clara CA US |
