| 发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor structure includes a substrate, at least one first epitaxial layer, and at least one second epitaxial layer. The substrate has a plurality of recesses multidimensionally arranged therein. The first epitaxial layer is disposed at least in the recesses of the substrate. The second epitaxial layer is disposed on the first epitaxial layer. |
| 申请公布号 |
US2016240427(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201514739418 |
申请日期 |
2015.06.15 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE Tung-Ying;CHEN Meng-Ku;HUANG Yu-Lien |
| 分类号 |
H01L21/763;H01L21/02;H01L29/165 |
主分类号 |
H01L21/763 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a substrate having a plurality of recesses multidimensionally arranged therein; at least one first epitaxial layer disposed at least in the recesses of the substrate; and at least one second epitaxial layer disposed on the first epitaxial layer. |
| 地址 |
HSINCHU TW |
