| 发明名称 | Method for generating random number, memory storage device and control circuit | ||
| 摘要 | A method for generating a random number, a memory storage device and a control circuit are provided. The method includes: writing data into a plurality of memory cells; reading at least one of the memory cells repeatedly according to a first read voltage to obtain a plurality of sensing currents; and generating the random number according to the sensing currents. | ||
| 申请公布号 | US9465584(B2) | 申请公布日期 | 2016.10.11 |
| 申请号 | US201414203584 | 申请日期 | 2014.03.11 |
| 申请人 | PHISON ELECTRONICS CORP. | 发明人 | Lin Wei;Hsu Yu-Cheng;Lam Siu-Tung |
| 分类号 | G06F1/02;G06F7/58 | 主分类号 | G06F1/02 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. A method for generating a random number for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of memory cells, and the method for generating the random number comprises: storing data received from a host system into the memory cells; reading at least one of the memory cells repeatedly according to a first read voltage to obtain a plurality of sensing currents; and generating at least one random number according to the sensing currents. | ||
| 地址 | Miaoli TW | ||