Power conversion device including bidirectional switch having reverse-blocking insulated gate bipolar transistors

摘要

An increase in leakage current when a reverse voltage is applied to reverse-blocking insulated gate bipolar transistors is suppressed, thus reducing a loss resulting from the leakage current. A power conversion device includes a bidirectional switch formed by connecting two reverse-blocking insulated gate bipolar transistors having reverse breakdown voltage characteristics in reverse parallel. A control circuit is configured so as to output command signals for bringing the gates of the reverse-blocking insulated gate bipolar transistors, to which a reverse voltage is applied, into an on state.

主权项

1. A power conversion device comprising:
a bidirectional switch comprising two reverse-blocking insulated gate bipolar transistors, having reverse breakdown voltage characteristics, connected in reverse parallel, a configuration of the bidirectional switch being such that gate drive signals generated based on command signals output from a control circuit are given one to each of the two reverse-blocking insulated gate bipolar transistors, the control circuit being configured so as to output, as the command signals, a first command signal for bringing a gate of one of the two reverse-blocking insulated gate bipolar transistors, to which a reverse voltage is applied, into an on state while simultaneously outputting a second command signal that causes the other of the two reverse-blocking insulated gate bipolar transistors to turn on and off.