发明名称 |
Integrated circuit having strained fins on bulk substrate |
摘要 |
A method includes forming a set of fins composed of a first semiconductor material. The method further heats the set of fins to condense the fins and cause growth of a layer of oxide on vertical sidewalls thereof, masking a first sub-set of the fins, forming a plurality of voids in the oxide by removing a second sub-set of fins, where each void has a three-dimensional shape and dimensions that correspond to a three dimensional shape and dimensions of a corresponding removed fin from the second sub-set, and epitaxially growing in the voids a third sub-set of fins. The third sub-set of fins is composed of a second semiconductor material that differs from the first semiconductor material. Each fin of the third subset has a three dimensional shape and dimensions of a corresponding removed fin from the second sub-set. At least one structure formed by the method is also disclosed. |
申请公布号 |
US9524969(B1) |
申请公布日期 |
2016.12.20 |
申请号 |
US201514811887 |
申请日期 |
2015.07.29 |
申请人 |
International Business Machines Corporation |
发明人 |
Balakrishnan Karthik;Cheng Kangguo;Hashemi Pouya;Reznicek Alexander |
分类号 |
H01L27/00;H01L29/06;H01L29/78;H01L29/16;H01L27/092;H01L21/8238;H01L21/02;H01L29/165 |
主分类号 |
H01L27/00 |
代理机构 |
Harrington & Smith |
代理人 |
Harrington & Smith ;Percello Louis J. |
主权项 |
1. A structure, comprising:
a strain relaxed buffer disposed on a surface of a substrate; a set of fins disposed on a surface of the strain relaxed buffer, the set of fins comprised of a first subset of fins comprised of s-Si1-xGex and a second subset of fins comprised of s-Si, where the strain relaxed buffer is comprised of Si1-xGex, where x has a non-zero value=n, where the first subset of fins are comprised of Si1-xGex where x in the first subset of fins has a value=m, where m>n; and a layer disposed in a top surface portion of the strain relaxed buffer of Si1-xGex, the layer being disposed at least between individual fins of the set of fins, where x in the layer has the value=m. |
地址 |
Armonk NY US |