| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide high reliability and high retention while utilizing the merit of high numerical aperture of Cs on-gate structure by forming an auxiliary capacity of an electrode connected to a picture element electrode, and an electrode connected to a plurality of gate lines other than the gate line for driving the picture element. SOLUTION: Each picture element is formed of a thin film transistor(TFT) 107, a liquid crystal capacity 109, a first auxiliary capacity (Cs1) 110 and a second auxiliary capacity (Cs2) 111. Data lines 101, 102 are connected to one-side electrodes of the liquid crystal capacity 109, the first auxiliary capacity 110 and the second auxiliary capacity 111, and gate lines 103-106 are connected to the gate electrode 107c of the TFT 107. The other electrode of the liquid capacity 109 is connected to a counter electrode with a liquid crystal layer between, and the other electrodes of the auxiliary capacities are connected to the adjacent gate lines other than the gate line for driving the picture element.</p> |
