| 摘要 |
In a method of forming a wiring layer, a connection hole is formed to penetrate an insulating film. A barrier metal film is formed at least on an inner wall of the connection hole and a peripheral portion to have surface roughness. Next, a film of the metal including aluminum is deposited on the barrier metal film to fill a portion of the connection hole. Then, while the metal including aluminum is flowed into the connection hole, the film of the metal including aluminum is further deposited to fill the remaining portion of the connection hole with the metal including aluminum. In order to have the surface roughness sufficient to prevent cohesion of particles of metal including aluminum, the barrier metal film may be formed as an immediately lower layer of the metal film at a temperature in a range of room temperature to 150 DEG C. or under a pressure in a range of 10 to 30 mTorr. Alternatively, when the barrier metal film is composed of two films, each of the two films may be formed at a temperature in a range of room temperature to 150 DEG C. As a result, the surface roughness of the barrier metal film is in a range of 10 to 50 nm. As a result, the connection hole can be filled with the metal including aluminum.
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