Relaxed layout for storage nodes for dynamic random access memories

摘要

A memory cell structure (10) includes a plurality of bit lines (12) and intersecting word lines (14). Bit line contacts (16) are spaced evenly apart on an associated bit line (12). A plurality of storage nodes (20) and associated storage node contacts (18) are provided. Storage nodes (20) and storage node contacts (2) are spaced evenly apart along the associated bit line (12). The storage nodes (20) and storage node contacts (18) are offset with respect to storage nodes (20) and storage node contacts (18) placed along adjacent bit lines (12).