| 发明名称 |
Method for forming capacitor of nonvolatile semiconductor memory device and the capacitor |
| 摘要 |
In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.
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| 申请公布号 |
US2002000587(A1) |
申请公布日期 |
2002.01.03 |
| 申请号 |
US20010880056 |
申请日期 |
2001.06.14 |
| 申请人 |
KIM NAM KYEONG;PARK KI SEON;PARK DONG SU;AHN BYOUNG KWON;HAN SEUNG KYU |
发明人 |
KIM NAM KYEONG;PARK KI SEON;PARK DONG SU;AHN BYOUNG KWON;HAN SEUNG KYU |
| 分类号 |
C23C14/06;C23C16/30;H01L21/02;H01L21/314;H01L21/316;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;(IPC1-7):H01L21/00;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
C23C14/06 |
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