发明名称 |
FLASH MEMORY HAVING LOCAL SONOS STRUCTURE USING NOTCHED GATE AND MANUFACTURING METHOD THEREOF |
摘要 |
A notched gate SONOS transistor includes: a substrate having source/drain regions; a gate insulator layer on the substrate between the source/drain regions; a notched gate structure, on the gate insulator layer, having at least one notch; and at least one ONO wedge structure in the at least one notch, respectively, of the gate structure.
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申请公布号 |
US2004183106(A1) |
申请公布日期 |
2004.09.23 |
申请号 |
US20030388427 |
申请日期 |
2003.03.17 |
申请人 |
KIM SANG SU;LEE NAE-IN;BAE GEUM-JONG;KIM KI CHUL;RHEE HWA SUNG |
发明人 |
KIM SANG SU;LEE NAE-IN;BAE GEUM-JONG;KIM KI CHUL;RHEE HWA SUNG |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L27/148 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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