| 摘要 |
FIELD: manufacture of semiconductor devices. ^ SUBSTANCE: upon producing insulating film on semiconductor substrate surface devices are treated by high-energy electrons at dose rate of 2.1014 - 8.1016 cm-2 with energy of 4 MeV followed by baking at temperature of 300 - 500°C for 5 - 30 s. ^ EFFECT: reduced pore density which facilitates device manufacture; improved parameters, enhanced reliability and yield. ^ 1 cl, 1 tbl |
