发明名称 |
Thin film translator array panel and a method for manufacturing the panel |
摘要 |
A gate wire including a gate line and a gate electrode is formed on a substrate and a gate insulating layer is formed on the substrate. A semiconductor pattern and an etching assistant pattern are formed on the gate insulating layer and a source/drain conductor pattern and an etching assistant layer are formed on the semiconductor pattern and the etching assistant pattern. A data wire including a data line and source and drain electrodes separated from each other is formed by removing the etching assistant layer and partly removing the source/drain conductor pattern. A pixel electrode connected to the drain electrodes is formed. |
申请公布号 |
US2006194368(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20030531442 |
申请日期 |
2003.01.23 |
申请人 |
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发明人 |
HONG MUN-PYO;ROH NAM-SEOK;CHOE HEE-HWAN;SONG KEUN-KYU |
分类号 |
G02F1/136;H01L21/50;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/02;H01L27/12;H01L29/45;H01L29/49;H01L31/113 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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