| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device adapted to be capable of relaxing the stress of an upper part semiconductor layer (that is, a second semiconductor layer) of an SOI structure when forming the SOI structure of a semiconductor substrate. SOLUTION: On a single crystal Si substrate on which an element isolation layer 3 has been formed, a SiGe layer 11 and a Si layer 13 are laminated sequentially by the epitaxial growth method. Next, by partially etching the Si layer 13 and the SiGe layer 11 a support body hole h1 is formed on the element isolation layer 3 inside a bird's beak. Then, a support body 22 is formed so that it embeds the support body hole h1. Next, the Si layer 13 and the SiGe layer 11 that have been exposed from under the support body 22 are etched sequentially and thus a groove is formed and via this groove, the SiGe layer 11 is etched using nitrohydrofluoric acid. Owing to this, a hollow part is formed between the Si substrate and the Si layer 13. Because the Si layer 13b formed on the bird's beak has a poly or amorphous structure, it can be removed by nitrohydrofluoric acid. COPYRIGHT: (C)2008,JPO&INPIT
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