| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reliably isolating the electrode of a transistor in a trench structure, and to provide a method of manufacturing the semiconductor device. SOLUTION: A silicon oxide film 11 is formed on the side of each recess 10a, and on the upper surface of a silicon substrate 10 around each recess 10a. Further, a silicon nitride film 13 is formed on the upper surface of the silicon oxide film 11. The periphery of the silicon nitride film 13 is allowed to project from that of the silicon oxide film 11 in an overhang shape. Also, the silicon oxide film 11 around the opening of each recess 10a is formed in an overhang shape by isotropic etching. More specifically, at the periphery of the opening of each recess 10a, an overhang by the silicon nitride film 13 and that by the silicon oxide film 11 are formed. COPYRIGHT: (C)2008,JPO&INPIT
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