| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method capable of working a semiconductor substrate of silicon, group III nitride or the like, and an insulating substrate of glass or the like in the whole surface of the substrate uniformly with high speed. SOLUTION: A rotary electrode 2 having a suction air passage 11 and exhaust passages 12a, 12b is rotated about a rotary axis 3a whereby reactant gas is guided in between the rotary electrode 2 and a workpiece 6, then, is discharged out of the exhaust passages 12a, 12b through the suction air passage 11. The stagnation of the reactant gas can be cleared between the rotary electrode 2 and the workpiece 6 by a simple constitution. COPYRIGHT: (C)2008,JPO&INPIT
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