发明名称 METHOD OF MANUFACTURING DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a distributed feedback semiconductor laser, which suppresses variations in the coupling coefficientκof a diffraction grating in a plurality of such DFB (Distributed FeedBack) lasers. SOLUTION: A DFB laser DFB<SB>n</SB>is manufactured as follows. A diffraction grating layer G<SB>n</SB>having a plurality of grooves 22 (diffraction gratings) cyclically formed thereon is first formed on an active layer A<SB>n</SB>. A cladding layer 24 is then formed on the diffraction grating layer G<SB>n</SB>. A band gap wavelengthλ<SB>En</SB>of the diffraction grating layer G<SB>n</SB>is determined based on a correlation between the pre-calculated oscillating wavelengthλ<SB>n</SB>of the DFB laser DFB<SB>n</SB>and the band gap wavelengthλ<SB>En</SB>of the diffraction grating layer G<SB>n</SB>. The correlation is calculated when the coupling coefficientκof the diffraction grating layer G<SB>n</SB>is constant, when the plurality of grooves 22 have a constant depth D, and when the cladding layer 24 has a band gap wavelengthλ<SB>Eclad</SB>. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008227185(A) 申请公布日期 2008.09.25
申请号 JP20070064040 申请日期 2007.03.13
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MATSUMURA ATSUSHI
分类号 H01S5/12 主分类号 H01S5/12
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