| 摘要 |
PURPOSE: A method for forming a vertical channel transistor of a semiconductor device is provided to prevent the inclination and the collapse of a pillar by forming a surrounding gate electrode on the sidewall of the pillar. CONSTITUTION: A method for forming a vertical channel transistor of a semiconductor device is comprised of the steps: forming a plurality of pillars on a substrate(300); forming a gate insulating layer on the whole outcome on which the pillar(310); Forming a conduction film for a surrounding gate electrode on the side wall of the pillar in which the gate insulating layer is formed; burying a sacrificial film in a pillar gap on which the conduction film for a surrounding gate is formed by a expectation height of the conduction film for a surrounding gate; and removing the surrounding gate electrode(350A) and by removing the conduction film for a surrounding gate which is exposed by a sacrificial layer.
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