Semiconductor light emitting device

摘要

There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.

主权项

1. A semiconductor light emitting device comprising:
an n-type semiconductor layer; a p-type semiconductor layer including a plurality of first and second layers, each containing a p-type impurity, the plurality of first and second layers are alternately stacked, and impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein thicknesses of the plurality of first layers having increasing impurity concentrations increase in relation with the increase in impurity concentrations in the direction away from the n-type semiconductor layer.